HGTG20N60B3D igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−st.
operating at moderate frequencies where low conduction losses are essential.
Formerly developmental type TA49016.
Featur.
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